3、巨磁(ci)(ci)阻電(dian)(dian)(dian)流傳(chuan)感(gan)(gan)(gan)器(qi)(qi)(qi)巨磁(ci)(ci)阻電(dian)(dian)(dian)流傳(chuan)感(gan)(gan)(gan)器(qi)(qi)(qi)是基于GMR（GiantMegnetoResistant）效應來(lai)進行電(dian)(dian)(dian)流測(ce)(ce)(ce)量(liang)的，即通過(guo)電(dian)(dian)(dian)阻隨磁(ci)(ci)場變化來(lai)測(ce)(ce)(ce)量(liang)電(dian)(dian)(dian)流。GMR電(dian)(dian)(dian)流傳(chuan)感(gan)(gan)(gan)器(qi)(qi)(qi)具有(you)小(xiao)體(ti)積、高精度(du)(du)、高靈(ling)敏(min)度(du)(du)、寬(kuan)測(ce)(ce)(ce)量(liang)范圍(wei)、低成(cheng)本和高集成(cheng)度(du)(du)以(yi)及能夠(gou)測(ce)(ce)(ce)量(liang)交(jiao)直流等優點(dian)，因此應用在許多領域中(zhong)(zhong)(zhong)。然而，由于巨磁(ci)(ci)阻電(dian)(dian)(dian)流傳(chuan)感(gan)(gan)(gan)器(qi)(qi)(qi)受(shou)自身磁(ci)(ci)性材(cai)料特(te)點(dian)的限制(zhi)，對外界磁(ci)(ci)場以(yi)及溫度(du)(du)的變化較(jiao)為敏(min)感(gan)(gan)(gan)，易受(shou)周圍(wei)環(huan)境雜散磁(ci)(ci)場的影(ying)響，從(cong)而導致較(jiao)大(da)的輸出誤差(cha)，降低測(ce)(ce)(ce)量(liang)結果的準確度(du)(du),不適合用于復雜環(huan)境下的電(dian)(dian)(dian)流的檢測(ce)(ce)(ce)。在電(dian)(dian)(dian)力系統中(zhong)(zhong)(zhong)，磁(ci)(ci)通門電(dian)(dian)(dian)流傳(chuan)感(gan)(gan)(gan)器(qi)(qi)(qi)可以(yi)用于測(ce)(ce)(ce)量(liang)電(dian)(dian)(dian)網中(zhong)(zhong)(zhong)的交(jiao)流電(dian)(dian)(dian)流，以(yi)監(jian)控電(dian)(dian)(dian)力系統的運(yun)行狀態和電(dian)(dian)(dian)力質量(liang)。北京漏電(dian)(dian)(dian)保護電(dian)(dian)(dian)流傳(chuan)感(gan)(gan)(gan)器(qi)(qi)(qi)單價

誤差(cha)控(kong)制(zhi)(zhi)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)由PI環(huan)節構(gou)(gou)成，其(qi)直流(liu)(liu)(liu)開環(huan)增益越(yue)大(da)(da)(da)(da)越(yue)好(hao)，同時(shi)要求所選擇(ze)運算放(fang)(fang)(fang)大(da)(da)(da)(da)器失調電(dian)(dian)(dian)壓小，單(dan)位增益帶寬大(da)(da)(da)(da)，選用OP27G高精密運放(fang)(fang)(fang)。誤差(cha)控(kong)制(zhi)(zhi)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)輸(shu)出直接連接PA功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)，以驅(qu)動其(qi)輸(shu)出反(fan)饋電(dian)(dian)(dian)流(liu)(liu)(liu)IF。常見的(de)(de)功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)包括集成功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)以及三(san)極管(guan)(guan)等功(gong)率(lv)(lv)器件搭建(jian)的(de)(de)A類(lei)(lei)，B類(lei)(lei)，AB類(lei)(lei)，D類(lei)(lei)，H類(lei)(lei)功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)[9,50]。在基于磁通(tong)(tong)門原理的(de)(de)直流(liu)(liu)(liu)電(dian)(dian)(dian)流(liu)(liu)(liu)測量的(de)(de)類(lei)(lei)似方案中(zhong)，為(wei)(wei)了(le)通(tong)(tong)過降(jiang)低(di)功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)的(de)(de)功(gong)耗(hao)(hao)以改善整個系統的(de)(de)運行(xing)(xing)功(gong)耗(hao)(hao)，D類(lei)(lei)功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)，H類(lei)(lei)功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)常有出現，但該類(lei)(lei)功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)輸(shu)出紋(wen)波較大(da)(da)(da)(da)，因(yin)此對反(fan)饋電(dian)(dian)(dian)流(liu)(liu)(liu)中(zhong)交直流(liu)(liu)(liu)測量帶來誤差(cha)。為(wei)(wei)了(le)減小功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)環(huan)節的(de)(de)輸(shu)出紋(wen)波，本文選擇(ze)了(le)傳統AB類(lei)(lei)功(gong)率(lv)(lv)放(fang)(fang)(fang)大(da)(da)(da)(da)電(dian)(dian)(dian)路(lu)(lu)(lu)(lu)，其(qi)功(gong)率(lv)(lv)器件選擇(ze)TI德州儀器旗(qi)下的(de)(de)TIP110，TIP117，兩者器件參數(shu)一致，為(wei)(wei)互補對稱(cheng)的(de)(de)大(da)(da)(da)(da)功(gong)率(lv)(lv)達(da)靈(ling)頓管(guan)(guan)，其(qi)大(da)(da)(da)(da)輸(shu)出交流(liu)(liu)(liu)可達(da)2A。濟(ji)南萊姆電(dian)(dian)(dian)流(liu)(liu)(liu)傳感器案例根據磁芯不(bu)同的(de)(de)結(jie)構(gou)(gou)，平行(xing)(xing)型(xing)(xing)(xing)磁通(tong)(tong)門傳感器可分為(wei)(wei)單(dan)棒型(xing)(xing)(xing)、雙棒型(xing)(xing)(xing)、管(guan)(guan)型(xing)(xing)(xing)、環(huan)型(xing)(xing)(xing)。

巨(ju)(ju)磁(ci)(ci)(ci)(ci)(ci)(ci)阻(zu)（GMR）效應在(zai)微(wei)小磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)測(ce)(ce)量(liang)領域實(shi)現了創新性(xing)的(de)(de)(de)(de)(de)改變(bian)，尤其(qi)在(zai)利用渦流(liu)(liu)(liu)(liu)(liu)傳感(gan)器(qi)(qi)進(jin)行(xing)無損檢(jian)(jian)測(ce)(ce)方面(mian)取得了很(hen)大(da)的(de)(de)(de)(de)(de)進(jin)展(zhan)。巨(ju)(ju)磁(ci)(ci)(ci)(ci)(ci)(ci)阻(zu)傳感(gan)器(qi)(qi)具有低(di)功耗(hao)、尺寸(cun)小、高(gao)(gao)靈敏(min)度(du)以及頻率(lv)與(yu)靈敏(min)度(du)的(de)(de)(de)(de)(de)不(bu)(bu)相關性(xing)等特點；同(tong)霍(huo)爾(er)傳感(gan)器(qi)(qi)相同(tong)，巨(ju)(ju)磁(ci)(ci)(ci)(ci)(ci)(ci)阻(zu)芯片(pian)是傳感(gan)器(qi)(qi)的(de)(de)(de)(de)(de)主要(yao)(yao)組(zu)成部分，一般也容易受到環(huan)境(jing)中磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)的(de)(de)(de)(de)(de)干擾(rao)，不(bu)(bu)適用于(yu)電(dian)(dian)(dian)(dian)磁(ci)(ci)(ci)(ci)(ci)(ci)環(huan)境(jing)復(fu)雜的(de)(de)(de)(de)(de)環(huan)境(jing)，對復(fu)雜波形電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)也不(bu)(bu)能(neng)做出準(zhun)確(que)的(de)(de)(de)(de)(de)檢(jian)(jian)測(ce)(ce)。磁(ci)(ci)(ci)(ci)(ci)(ci)通(tong)門(men)傳感(gan)器(qi)(qi)(Fluxgatecurrentsensor)，一開(kai)始(shi)主要(yao)(yao)用于(yu)弱(ruo)磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)的(de)(de)(de)(de)(de)檢(jian)(jian)測(ce)(ce)，比如(ru)地磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)檢(jian)(jian)測(ce)(ce)、鐵礦(kuang)石檢(jian)(jian)測(ce)(ce)、位(wei)移(yi)檢(jian)(jian)測(ce)(ce)和(he)(he)(he)管道泄漏檢(jian)(jian)測(ce)(ce)等方面(mian)。隨(sui)著這種技術的(de)(de)(de)(de)(de)發展(zhan)，磁(ci)(ci)(ci)(ci)(ci)(ci)通(tong)-2-門(men)傳感(gan)器(qi)(qi)廣泛應用于(yu)太空探(tan)測(ce)(ce)和(he)(he)(he)地質(zhi)勘(kan)探(tan)中。磁(ci)(ci)(ci)(ci)(ci)(ci)通(tong)門(men)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)傳感(gan)器(qi)(qi)的(de)(de)(de)(de)(de)結構類似霍(huo)爾(er)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)傳感(gan)器(qi)(qi)，是基于(yu)檢(jian)(jian)測(ce)(ce)磁(ci)(ci)(ci)(ci)(ci)(ci)路的(de)(de)(de)(de)(de)飽和(he)(he)(he)特性(xing)而設計的(de)(de)(de)(de)(de)。磁(ci)(ci)(ci)(ci)(ci)(ci)通(tong)門(men)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)傳感(gan)器(qi)(qi)采用高(gao)(gao)磁(ci)(ci)(ci)(ci)(ci)(ci)導率(lv)的(de)(de)(de)(de)(de)磁(ci)(ci)(ci)(ci)(ci)(ci)芯，通(tong)過磁(ci)(ci)(ci)(ci)(ci)(ci)芯的(de)(de)(de)(de)(de)交替飽和(he)(he)(he)，產生(sheng)的(de)(de)(de)(de)(de)感(gan)應電(dian)(dian)(dian)(dian)壓和(he)(he)(he)被測(ce)(ce)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)之(zhi)間存在(zai)著一定(ding)的(de)(de)(de)(de)(de)數量(liang)關系，從而可(ke)以得到被測(ce)(ce)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)。它實(shi)際上(shang)檢(jian)(jian)測(ce)(ce)磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)的(de)(de)(de)(de)(de)變(bian)化，通(tong)過磁(ci)(ci)(ci)(ci)(ci)(ci)與(yu)電(dian)(dian)(dian)(dian)的(de)(de)(de)(de)(de)聯系來得到被測(ce)(ce)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)。近幾年，隨(sui)著軟磁(ci)(ci)(ci)(ci)(ci)(ci)材(cai)料的(de)(de)(de)(de)(de)發展(zhan)和(he)(he)(he)電(dian)(dian)(dian)(dian)子元器(qi)(qi)件的(de)(de)(de)(de)(de)革新，磁(ci)(ci)(ci)(ci)(ci)(ci)通(tong)門(men)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)傳感(gan)器(qi)(qi)的(de)(de)(de)(de)(de)性(xing)能(neng)不(bu)(bu)斷提(ti)高(gao)(gao)，其(qi)應用范圍不(bu)(bu)斷擴大(da)，受到越來越多的(de)(de)(de)(de)(de)關注(zhu)。

IC為穩(wen)態充電(dian)(dian)電(dian)(dian)流(liu)，即在理(li)想情況下t=∞時刻，通(tong)過激磁(ci)(ci)電(dian)(dian)感中的穩(wen)態充電(dian)(dian)電(dian)(dian)流(liu)滿(man)(man)足(zu)IC=Vout/Rsum。τ1為鐵(tie)(tie)芯C1回路放放電(dian)(dian)時間常數，τ1=l/Rsum。在t1時刻，鐵(tie)(tie)芯C1工作點將(jiang)由負(fu)向飽(bao)和(he)區(qu)C進(jin)入(ru)線(xian)性(xing)區(qu)A，此(ci)時激磁(ci)(ci)電(dian)(dian)流(liu)iex降低至負(fu)向飽(bao)和(he)閾值(zhi)電(dian)(dian)流(liu)I-th1，其(qi)滿(man)(man)足(zu)Ip=-Ip1，I-th1=I-th-βIp。可得t1時刻激磁(ci)(ci)電(dian)(dian)流(liu)終值(zhi)iex(t1)滿(man)(man)足(zu)：iex(t1)=一I-th1=一Ith+βIp1其(qi)中β=Np/N1，βIp1可以將(jiang)理(li)解為，一次電(dian)(dian)流(liu)在鐵(tie)(tie)芯C1中產生(sheng)的磁(ci)(ci)勢(shi)折算到激磁(ci)(ci)繞組W1側(ce)的磁(ci)(ci)勢(shi)大(da)小。磁(ci)(ci)通(tong)門電(dian)(dian)流(liu)傳(chuan)感器也(ye)可以用(yong)于測量脈(mo)沖電(dian)(dian)流(liu)，監測和(he)控制脈(mo)沖電(dian)(dian)流(liu)的狀態。

根據前述(shu)假(jia)設，Im<<IC且(qie)在線性(xing)(xing)區(qu)(qu)A激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)感(gan)L遠大(da)于(yu)飽和區(qu)(qu)B、C激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)感(gan)l，因此(ci)τ2>>τ1，因此(ci)式（2－31）進一(yi)(yi)(yi)步(bu)化(hua)簡得(de)：T=TP+TN=(IC一(yi)(yi)(yi)4Ith(I)th(β(IC)Ip(一(yi)(yi)(yi))I(h)(τ2Ith(一(yi)(yi)(yi))Ip1)（2－32）根據式（2－27）（2－30）（2－32）可(ke)(ke)求(qiu)得(de)激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)壓信(xin)號Vex在一(yi)(yi)(yi)個周波內(nei)平(ping)(ping)均電(dian)(dian)(dian)(dian)(dian)(dian)壓Vav滿足：Vav=Vout=ICβ一(yi)(yi)(yi)II(p1)thVout（2－33）根據前述(shu)假(jia)設Ith<<IC可(ke)(ke)進一(yi)(yi)(yi)步(bu)對式（2-33）分母進行(xing)化(hua)簡，帶入下列(lie)表達式IC=Vout/Rsum，β=Np/N1，iex=Vout/(RC+RS)及Rsum=RC+RS可(ke)(ke)進一(yi)(yi)(yi)步(bu)得(de)激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)平(ping)(ping)均值(zhi)(zhi)(zhi)iav滿足：iav=一(yi)(yi)(yi)（2－34）式（2－34）即(ji)為(wei)平(ping)(ping)均電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)模(mo)型基于(yu)磁(ci)(ci)化(hua)曲線的(de)分段線性(xing)(xing)化(hua)模(mo)型所得(de)激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)與(yu)一(yi)(yi)(yi)次(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)之間的(de)定量(liang)關系式，即(ji)自激振(zhen)(zhen)蕩(dang)磁(ci)(ci)通(tong)(tong)門電(dian)(dian)(dian)(dian)(dian)(dian)路激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)平(ping)(ping)均值(zhi)(zhi)(zhi)與(yu)一(yi)(yi)(yi)次(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)之間呈線性(xing)(xing)比(bi)例(li)關系，且(qie)激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)平(ping)(ping)均值(zhi)(zhi)(zhi)正負與(yu)一(yi)(yi)(yi)次(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)方(fang)向相關。自激振(zhen)(zhen)蕩(dang)磁(ci)(ci)通(tong)(tong)門電(dian)(dian)(dian)(dian)(dian)(dian)路可(ke)(ke)以識(shi)別電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)方(fang)向且(qie)激磁(ci)(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)平(ping)(ping)均值(zhi)(zhi)(zhi)與(yu)一(yi)(yi)(yi)次(ci)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)量(liang)值(zhi)(zhi)(zhi)線性(xing)(xing)相關，這便為(wei)自激振(zhen)(zhen)蕩(dang)磁(ci)(ci)通(tong)(tong)門電(dian)(dian)(dian)(dian)(dian)(dian)路測量(liang)交(jiao)(jiao)(jiao)流(liu)(liu)及交(jiao)(jiao)(jiao)直流(liu)(liu)提供了(le)理論上的(de)可(ke)(ke)行(xing)性(xing)(xing)，現對IP為(wei)交(jiao)(jiao)(jiao)直流(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)時(shi)(shi)，自激振(zhen)(zhen)蕩(dang)磁(ci)(ci)通(tong)(tong)門電(dian)(dian)(dian)(dian)(dian)(dian)路測量(liang)原理進行(xing)分析。電(dian)(dian)(dian)(dian)(dian)(dian)阻值(zhi)(zhi)(zhi)的(de)變(bian)化(hua)：霍爾(er)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)傳感(gan)器的(de)內(nei)部電(dian)(dian)(dian)(dian)(dian)(dian)阻值(zhi)(zhi)(zhi)可(ke)(ke)能(neng)會受(shou)到溫度(du)、濕度(du)、機械應力和時(shi)(shi)間等(deng)因素的(de)影響而發生(sheng)變(bian)化(hua)。無錫化(hua)成分容(rong)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)傳感(gan)器價格大(da)全

抗電磁(ci)干擾：由于磁(ci)通門傳感(gan)(gan)器是通過測(ce)(ce)量磁(ci)通量來間接測(ce)(ce)量電流的(de)，因此它可(ke)以抵(di)抗電磁(ci)干擾的(de)影響。北京漏(lou)電保護(hu)電流傳感(gan)(gan)器單價

電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)技術(shu)方(fang)案(an)差(cha)異(yi)分(fen)析隨著電(dian)(dian)力電(dian)(dian)子技術(shu)應用(yong)的(de)(de)逐步發展，人們對電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)的(de)(de)性能提出了(le)更高的(de)(de)要求(qiu)，所以(yi)電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)迅速發展起來。為了(le)滿足電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)在不(bu)同領域中(zhong)的(de)(de)技術(shu)需(xu)求(qiu)，產業界開發出了(le)各種類(lei)型電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)，如霍(huo)爾電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)、羅氏線圈、巨磁(ci)阻電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)、電(dian)(dian)流互感(gan)器(qi)、分(fen)流電(dian)(dian)阻以(yi)及磁(ci)通門電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)等。小編(bian)在7月份在無錫納(na)吉伏公司的(de)(de)網站上(shang)對這(zhe)些(xie)不(bu)同電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)的(de)(de)技術(shu)路線差(cha)異(yi)進行(xing)了(le)初步分(fen)析分(fen)析，下面(mian)詳細(xi)介紹(shao)上(shang)述幾種常見(jian)的(de)(de)電(dian)(dian)流傳(chuan)(chuan)感(gan)器(qi)。

霍(huo)(huo)爾(er)效(xiao)應傳(chuan)感(gan)(gan)器(qi)是基(ji)于(yu)霍(huo)(huo)爾(er)效(xiao)應的(de)(de)(de)磁(ci)(ci)場(chang)傳(chuan)感(gan)(gan)器(qi)。它(ta)是一種(zhong)隔(ge)離的(de)(de)(de)非(fei)侵入式(shi)設 備(bei)，可(ke)同時應用于(yu)直流(liu)(liu)和(he)交(jiao)流(liu)(liu)電(dian)(dian)(dian)(dian)流(liu)(liu)檢測，通(tong)常高達數百千赫茲。由于(yu)其簡(jian)單(dan)的(de)(de)(de)結(jie)構，與(yu)微(wei)電(dian)(dian)(dian)(dian)子器(qi)件(jian)的(de)(de)(de)兼容性(xing)，霍(huo)(huo)爾(er)器(qi)件(jian)可(ke)以單(dan)片集成(cheng)到完全集成(cheng)的(de)(de)(de)磁(ci)(ci)傳(chuan)感(gan)(gan)器(qi)中。霍(huo)(huo)爾(er)傳(chuan)感(gan)(gan)器(qi)可(ke)以使用常規(gui)的(de)(de)(de)CMOS技術制(zhi)造。但是，它(ta)通(tong)常比電(dian)(dian)(dian)(dian)流(liu)(liu)互感(gan)(gan)器(qi)或(huo)Rogowski傳(chuan)感(gan)(gan)器(qi)昂貴。盡管霍(huo)(huo)爾(er)傳(chuan)感(gan)(gan)器(qi)可(ke)以測量(liang)直流(liu)(liu)電(dian)(dian)(dian)(dian)流(liu)(liu)，但由于(yu)鐵芯飽和(he)，霍(huo)(huo)爾(er)傳(chuan)感(gan)(gan)器(qi)通(tong)常具(ju)(ju)有有限的(de)(de)(de)峰值(zhi)電(dian)(dian)(dian)(dian)流(liu)(liu)，并(bing)且具(ju)(ju)有有限的(de)(de)(de)帶(dai)寬(kuan)（<1MHz）。另外(wai)(wai)，它(ta)對外(wai)(wai)部磁(ci)(ci)場(chang)非(fei)常敏感(gan)(gan)，霍(huo)(huo)爾(er)傳(chuan)感(gan)(gan)器(qi)的(de)(de)(de)溫度(du)穩定(ding)性(xing)和(he)時間穩定(ding)性(xing)非(fei)常不好。霍(huo)(huo)爾(er)效(xiao)應傳(chuan)感(gan)(gan)器(qi)主要在閉環模(mo)式(shi)下(xia)工作，以實現更(geng)高的(de)(de)(de)精(jing)度(du)和(he)更(geng)寬(kuan)的(de)(de)(de)動態(tai)范圍。北京漏電(dian)(dian)(dian)(dian)保護(hu)電(dian)(dian)(dian)(dian)流(liu)(liu)傳(chuan)感(gan)(gan)器(qi)單(dan)價

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